Lowtemperature direct wafer bonding is a promising technique for fabricating multijunction solar cells with more than four junctions in order to obtain high conversion ef. We present a technique for the fabrication of materials integration of 100 silicon and 100 gallium arsenide by direct wafer bonding. Wafer bonding applications and technology marin alexe. Hesler, member, ieee, kai hui, student member, ieee. The interface energy is sufficiently high to allow thinning of the gaas wafer.
Gaas wafers temporarily and reversibly bonded to a car rier substrate are suited for reliable back thinning and backside lithography. Propagation of wafer bonding infrared camera view of bonding propagating from the tong point in the center outward to the edges of two silicon wafers. Hybridintegrated gaasgaas and inpgaas semiconductors. Comparison of singulation techniques electronic packaging society, silicon valley chapter sept. Written by authors and edited by a team from microsystems companies and industrynear research organizations, this handbook and reference presents dependable, first. Suppose that two wafers are rigidly bonded at room temperature. Hence the dwb of gaasonsapphire, optionally with subsequent thinning of the gaas wafer, offers an attractive way to fabricate gaas layers on sapphire. Fortunately, wafer bonding and layer transfer processes allow integration of nonlatticematched semiconductors by isolating the associated misfit defects to the bonded interfaces. Hence the dwb of gaas onsapphire, optionally with subsequent thinning of the gaas wafer, offers an attractive way to fabricate gaas layers on sapphire. A wafer bonded fourjunction cell design consisting of ingaas, ingaasp, gaas, and ga0. Smart equipment technology 1 impasse barteudet, 74490 saint jeoire, france. The design relies on waferbonding and layer transfer for integration of nonlatticematched subcells. Pdf wafer bonding for compound semiconductor processing is a new manufacturing technology, which is highly appreciated by the industry. C, and the bonded ngaasninp specimens were obtained even at a temperature as low as 350.
Pdf wafer bonding of gallium arsenide on sapphire researchgate. Gaas substrate wafer this process was invented by eli yablonovitch of bell labs in 1988. Comparison of direct growth and wafer bonding for the. Low temperature gaassi direct wafer bonding max planck institute.
Thermal analysis of sigaas bonding wafers and mitigation. A historical patent picture of the worldwide moving front of the stateoftheart of contact bonding. Direct wafer bonding has been reported to be an ideal approach to integrate mismatched materials and has been used to fabricate a number of advanced microelectronic or photonic devices. Interface structure and adhesion of waferbonded gangan. The wafer surfaces were cleaned at 400 and 500 c by application of atomic. Pdf reversible and permanent wafer bonding for gaas processing. The bonding procedure was carried out in an ultrahigh vacuum. Gaas wafers temporarily and reversibly bonded to a carrier substrate are suited for reliable back thinning and backside lithography.
The relaxed requirements on surface cleanliness, contamination and surface roughness combined with the planarizing action of the adhesive spin coating wee1 87. Interface structure and adhesion of waferbonded gangan and. Sigaas heterostructures fabricated by direct wafer bonding. Roomtemperature gaasinp wafer bonding with extremely low resistance shiro uchida 1, tomomasa watanabe 1, hiroshi yoshida, takashi tange, masayuki arimochi, masao ikeda 2, pan dai, wei he 2, lian ji, shulong lu, and hui yang 1advanced materials laboratories, sony corporation, atsugi, kanagawa 2430014, japan 2suzhou institute of nanotech and nanobionics, chinese academy of. Direct bonding of gaas films on silicon circuits by epitaxial liftoff 1733 after bonding. The interface energy is sufficiently high to allow thinning of the gaas. A gaas wafer is a compound semiconductor that has gained its popularity because it has numerous properties. Ingaas algaas gaas alas gaas gaas substrate wafer silicon handle wafer h. These modules are the bonding of the front side processed wafer on a carrier, thinning of the wafer, through wafer via etching, the backside metallisation for the ground plate and the debonding of the thinned wafer. Thermal analysis of sigaas bonding wafers and mitigation strategies of the bonding stresses. Instead, the bonding is more covalent, and gallium arsenide is a covalent semiconductor. Gaas wafer bonding by atomic hydrogen surface cleaning takeshi akatsu,a andreas plol, heinz stenzel, and ulrich go.
We realized compliant substrates in the square centimeter range by twistwafer bonding of an 100 gaas handle wafer to another 100 gaas wafer with a several nm thick epitaxially grown. It is a iiiv direct band gap semiconductor with a zinc blende crystal structure gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared lightemitting diodes, laser diodes, solar cells and optical windows. High accuracy placement, then gang bonding gilbert lecarpentier set smart equipment technology, 1 impasse barteudet, saint jeoire, france. Two different process technologies were investigated for the fabrication of highefficiency gainpgaas dualjunction solar cells on silicon. Four junction solar cell with 40% target efficiency. Lester,3 and wei guo2,a 1microsystems engineering, rochester institute of technology, rochester, new york 14623, usa 2physics and applied physics department, university of massachusetts lowell, lowell, massachusetts. Cmos wafer bonding for backside illuminated image sensors fabrication abstract. Reversible and permanent wafer bonding for gaas processing. Fabrication of gan leds by wafer bonding and liftoff techniques. In order to effectively reduce the thermal stresses of sigaas bonding wafers during their annealing process, first of all, based on e. Direct bonding of gaas films on silicon circuits by epitaxial. Roomtemperature gaas inp wafer bonding with extremely low resistance shiro uchida 1, tomomasa watanabe 1, hiroshi yoshida, takashi tange, masayuki arimochi, masao ikeda 2, pan dai, wei he 2, lian ji, shulong lu, and hui yang.
Introduction wafer bonding is the key enabling technology. Wafer bonding of gallium arsenide on sapphire springerlink. The intention of this research is to combine the advantages of high efficiencies in iiiv tandem solar cells with the low cost of silicon. The design relies on wafer bonding and layer transfer for integration of nonlatticematched subcells.
Mobile electrostatic carrier mec evaluation for a gaas. The highest level of uniformity for the spincoated wax is essential. Subsequent heating up to 500 c increased the bond energy of the gaasonsapphire gos wafer pair close to the fracture energy of the bulk material. During postfabrication, the film would be more vulnerable to steps such as blow drying, photoresist removal, etc. Handbook of wafer bonding nanomaterials nanotechnology. High performance inas quantum dot lasers on silicon. The bonding procedure was carried out at temperatures from 350 to 500. Roomtemperature gaasinp wafer bonding with extremely. A waferbonded fourjunction cell design consisting of ingaas, ingaasp, gaas, and ga0. Room temperature wafer bonding machine bond meister. Gainpgaassi triplejunction solar cell formed by wafer bonding. For example, it has been previously proposed to wafer bond a gaas wafer with a ga0. Wafer bonding and layer transfer processes for high.
Room temperature wafer bonding machine bond meister introduction. Roomtemperature wafer bonder bond meister will expands the new fields of bonding application. Wafer bonding for compound semiconductor processing is a new manufacturing technology, which is highly appreciated by the industry and supports successfully new ways of processing thin and large diameter gaas wafers. An approach for lowtemperature direct wafer bonding of gaasinp was presented. Highperformance temporary adhesives for wafer bonding. Gaas wafer processing consists of five process modules. The bond energy was measured as a function of the temperature. Cmos wafer bonding for backside illuminated image sensors. The basics of wafer bonding technology are described, including microcleanroom approaches, prevention of interface bubbles, bonding of iiiv compounds, lowtemperature bonding, ultrahigh vacuum bonding, thinning methods such as smartcut procedures, and twist wafer bonding for compliant substrates. Wafertowafer and chiptowafer bonding cambridge core. Since the thermal expansion coefficients of gaas and sapphire are close. The focus behind this book on wafer bonding is the fast paced changes in the research and development in threedimensional 3d integration, temporary bonding and microelectromechanical systems mems with new functional layers. In this paper the authors report on the direct bonding of compound semiconductors and silicon annealed at low temperatures 400 c using hydrogen and nitrogen.
Gaas wafer common gaas wafer applications and uses. Ultrahigh vacuum direct bonding of a pn junction gaas wafer using lowenergy hydrogen ion beam surface cleaning pulse plating of pt on ngaas 100 wafer surfaces. Backside illuminated cmos image sensors were developed in order to encompass the pixel area limitation due to metal interconnects. Largearea wafer bonding of gaas using hydrogen and ultrahigh. During the past decade direct wafer bonding has developed into a mature materials integration technology. Roomtemperature gaasinp wafer bonding with extremely low.
Uniform direct or fusion wafer bonding of gaas wafers up to 4 inch. Ultrathin semiconductor wafer applications and processes. In this technology the fully processed cmos wafer is bonded to a blank carrier wafer and then backthinned in order to open the photosensitive sensor area. Synchrotron induced photoelectron spectroscopy and xps of wet fabrication processes. In this paper, we will deal with only the issue of wafer bonding. Highperformance temporary adhesives for wafer bonding applications rama puligadda1, sunil pillalamarri1, wenbin hong 1, chad brubaker2, markus wimplinger2, and stefan pargfrieder3 1brewer science, inc. An example of a few of these properties are high electron mobility, high thermal stability, low noise, and broad operating temperature range. Pdf gaas wafer bonding by atomic hydrogen surface cleaning.
A method of largearea wafer bonding of gaas is proposed. The bonding strength for a wax layer is large enough to withstand even. Pdf sigaas heterostructures fabricated by direct wafer. A much better bonding can be achieved if the substrate is covered with pd lo.
Gallium arsenide gaas could be formed as an insulator by transferring three electrons from gallium to arsenic. Wafer bonding is an integral part of the fabrication of mems, optoelectronics, and heterogeneous wafer stacks, including silicononinsulator. Wafer bonding and layer transfer processes have shown promise in the. Wafer bonding to integrate silicon, gallium arsenide, and gallium nitride. Lowtemperature direct wafer bonding of gaasinp sciencedirect. Waferlevel integration has the advantage of higher throughput, enhanced cleanliness and the flexibility that standard fab equipment can be used for further processing. Stealth dicing on gaas example on gaas mirror wafer wafer thickness. The compositional profile on the gaasinp heterointerface was studied by xray photoelectron spectroscopy. Suhirs bimaterial thermal stress theory, the thermal stresses in the wafer bonding interfaces are analyzed and the thermal stress distribution formulas are obtained.
Gainpgaassi triplejunction solar cell formed by wafer bonding karen dreyer, elvira fehrenbacher, eduard oliva, stephanie essig, vera klinger, tobias roesener, antonio leimenstoll, felix schatzle, martin hermle, andreas bett, frank dimroth fraunhoferinstitut fur solare energiesysteme ise dpgfruhjahrstagung 2011 03162011. The outer shells of the gallium atoms contribute three electrons, in crystal. Fabrication of gan leds by wafer bonding and liftoff. High performance inas quantum dot lasers on silicon substrates by low temperature pdgaas wafer bonding zihao wang,1 ruizhe yao, 2 stefan f. Figure from tong and gosele, semi wafer bonding, 1999. Wafer bonding to integrate silicon, gallium arsenide, and. Direct bonding of gaasgaas and gaasinp wafers have been. Its superior qualities make it desirable for a number of realworld applications. Pdf integrated gaas schottky mixers by spinondielectric. The bonding interfaces between these wafers were inspected using infrared transmission imaging. Wafer bonding technique thus has been used to replace thick epitaxial. A flowchart depicting the entire mmic processing flow, including the quality conformance inspection qcilat process described herein and wafer level lot acceptance testing is.
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